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| AOU402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU402 is Pb-free (meets ROHS & Sony 259 specifications). AOU402L is a Green Product ordering option. AOU402 and AOU402L are electrically identical. TO-251 D Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) < 60 m (VGS = 10V) RDS(ON) < 85 m (VGS = 4.5V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 60 20 12 8.5 30 12 23 20 10 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RJA RJC Typ 100 4 Max 125 7.5 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU402 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=12A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=12A TJ=125C 1 30 47 85 67 14 0.74 1 12 385 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 55 20 1.35 7.5 VGS=10V, VDS=30V, ID=12A 3.8 1.2 1.9 4.2 VGS=10V, VDS=30V, RL=2.5, RGEN=3 IF=12A, dI/dt=100A/s 3.4 16 2 27.6 30 35 2 10 5 540 85 60 2.4 Min 60 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev1: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 ID (A) 15 4.5V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V,6A VGS=10V, 12A VGS=4V 5 3.5V 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 7V 5V ID(A) 125C 10 25C 6V 20 VDS=5V 15 70 RDS(ON) (m) VGS=4.5V 60 VGS=10V 50 40 0 4 8 12 16 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 RDS(ON) (m) 120 125C 100 80 25C 60 IS (A) ID=12A 1.0E+01 1.0E+00 125C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 40 4 6 8 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AOU402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 8 VGS (Volts) 6 4 2 100 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 TJ(Max)=175C, TA=25C 10s 10.0 ID (Amps) RDS(ON) limited 1ms 10ms 1.0 DC 40 0 0.0001 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=7.5C/W 1 100s Power (W) 120 80 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss VDS=30V ID=12A Capacitance (pF) 600 500 400 300 Coss 200 Ciss 200 160 TJ(Max)=175C TA=25C 0.1 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 ID(A), Peak Avalanche Current Power Dissipation (W) 0.001 12 10 8 6 4 TA=25C 25 tA = L ID BV - VDD 20 15 10 5 0 2 0 0.00001 0.0001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability TCASE (C) Figure 13: Power De-rating (Note B) 14 12 Current rating ID(A) 10 8 6 4 2 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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